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FQP8N60C Data Sheet

Manufacturer: ON Semiconductor

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 600 V

Id-Continuous Drain Current: 7.5 A

Rds On-Drain Source On Resistance: 1.2 Ohms

Vgs - Gate-Source Voltage: 30 V

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 147 W

Configuration: Single

Channel Mode: Enhancement

Package: Tube

Height: 16.3 mm

Length: 10.67 mm

Series: FQP8N60C

Transistor Type: 1 N-Channel

Type: MOSFET

Width: 4.7 mm

Trademarks: ON Semiconductor / Fairchild

Forward Transconductance - Min: 8.7 S

Fall Time: 64.5 ns

Product Type: MOSFET

Rise Time: 60.5 ns

Factory Packing Quantity: 1000

Subcategory: MOSFETs

Typical turn-off delay time: 81 ns

Typical turn-on delay time: 16.5 ns

Part number alias: FQP8N60C_NL

Unit weight: 1.800 g