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FMMTA42TA Data Sheet

Manufacturer: Diodes Incorporated

Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)

RoHS: Details

Installation style: SMD/SMT

Package/Case: SOT-23-3

Transistor Polarity: NPN

Configuration: Single

Collector-emitter maximum voltage VCEO: 300 V

Collector-Base Voltage VCBO: 300 V

Emitter-Base Voltage VEBO: 5 V

Collector-Emitter Saturation Voltage: 0.5 V

Maximum DC collector current: 0.2 A

Gain bandwidth product fT: 50 MHz

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Series: FMMTA

DC current gain hFE max: 25 at 1 mA, 10 V

Height: 1 mm

Length: 3.05 mm

Package: Cut Tape

Package: MouseReel

Package: Reel

Width: 1.4 mm

Trademark: Diodes Incorporated

Collector Continuous Current: 0.2 A

DC Collector/Base Gain hfe Min: 25

Pd-Power Dissipation: 330 mW

Product Type: BJTs - Bipolar Transistors

Factory Packing Quantity: 3000

Subcategory: Transistors

Unit weight: 8 mg