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  • 2022-09-24 12:35:29
NCE3406N

NCE3406N_NCE60P05AS Introduction As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. The above is t...

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  • 2022-09-24 12:35:29
NCE2025S

NCE2025S_NCE60P05N Introduction So why NCE80H12 can be used for electric vehicle controller? What role does it play in the electric vehicle controller? . Today, I will introduce to you the functions and uses of the FET NCE80H12 in the electric vehicle controller. New Clean Energy MOS tube NCE80H12 is an N-channel in-line MOS tube in TO-220 package with drai...

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  • 2022-09-24 12:35:29
Leadchip UCS1912S

Leadcore UCS1912S TJA1051T/1 ISL9237HRZ-T XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG...

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  • 2022-09-24 12:35:29
Jingfeng BP2866BJ

Jingfeng BP2866BJ TJA1051T/1 ISL9237HRZ-T XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG...

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  • 2022-09-24 12:35:29
NCE6802

NCE6802_NCE60P50 Introduction MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run. TSMC is only foundry, and does not have its own brand IC products. Samsung and Intel have their own brands of IC products, but also OEM for other companies. There are also some IC ...

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  • 2022-09-24 12:35:29
NCE30H29D

NCE30H29D_NCE60P55K Introduction In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc. The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 use...

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  • 2022-09-24 12:35:29
NCEB301Q

NCEB301Q_NCE01P30K Introduction The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small). The resistance of this current path is called the internal resistance of the M...

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  • 2022-09-24 12:35:29
STM32L476VGT6 original spot

Shenzhen Hualaishen Electronics Co., Ltd. integrity first

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  • 2022-09-24 12:35:29
IRS23364DSTRPBF

IRS23364DSTRPBF_GCM21A5C2E470JX01J Introduction Of the roughly $1.5 billion in annual production at the two 150mm fabs, a significant portion will be moved to 300mm fabs, increasing productivity and economics, Pahl said. With crystal oscillation, precise rhythm is achieved. But when these expensive crystals wear out, they can vibrate or jump, affecting the accuracy of timek...

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  • 2022-09-24 12:35:29
S912XHY256F0VLM NXP LQFP112

S912XHY256F0VLM Original Spot In Stock

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  • 2022-09-24 12:35:29
LM2904DGKR general purpose op amp

LM2904DGKR Universal Op Amp_GCM21A5C2E911FX01D Introduction Texas Instruments (TI) said it will close its last two 150mm (6-inch) wafer fabs in the next few years while building its next 300mm (12-inch) fab at its Richardson, Texas, fab. "This will be a multi-year program that is expected to be completed no later than 2023 to 2025," Dave Pahl, head of investor relations...

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