Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Qualification: AEC-Q101 Package:Tube Trademark: Infineon / IR Product Type: IGBT Transistors Factory Packing Quantity: 400 Subcategory: IGBTs Part number alias: SP001511202 Unit weight: 8.732 g
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Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Package/Case: TO-247AD-3 Installation style: Through Hole Configuration:Single Collector-emitter maximum voltage VCEO: 600 V Collector-emitter saturation voltage: 2.15 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 60 A Pd - Power Dissipati...
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MA4L021-1056 category Discrete Semiconductor Products Diode - RF manufacturer MACOM Technology Solutions series MA4L Package tray product status in stock Diode Type PIN - Single Voltage - Peak Reverse (max) 35V Current - max 100 mA Capacitance at different Vr, F 0.2pF@0V, 1MHz Resistance at different If, F 2.1 ohm @ 10mA, 500MHz Power dissipation (max)...
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MA4P7102F-1072T category Discrete Semiconductor Products Diode - RF manufacturer MACOM Technology Solutions series - Package Tape and Reel (TR) Shear Band (CT) product status in stock Diode Type PIN - Single Voltage - Peak Reverse (max) 200V Capacitance at different Vr, F - Resistance at different If, F 500 milliohms @ 100mA, 100MHz Power dissipation ...
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Manufacturer: STMicroelectronics Product Type: Linear Voltage Regulator RoHS: Details Installation style: Through Hole Package/Case: TO-220 Number of outputs: 1 Output Polarity: Positive Output voltage: 15V Output current: 1.5 A Output Type: Fixed Minimum input voltage: 17 V Maximum input voltage: 35 V Minimum Operating Temperature:- 40 C Maximum operating t...
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Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Package/Case:TO-247-6 Installation style: Through Hole Configuration:Single Collector-emitter maximum voltage VCEO: 1350 V Collector-emitter saturation voltage: 1.65 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 40 A Pd - Power Dissipation: 2...
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Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Package/Case:TO-263-3 Installation style: SMD/SMT Configuration:Single Collector-emitter maximum voltage VCEO: 650 V Collector-emitter saturation voltage: 1.35 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 35 A Pd - Power Dissipation: 10...
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Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Package/Case:TO-263-3 Installation style: SMD/SMT Configuration:Single Collector-emitter maximum voltage VCEO: 650 V Collector-emitter saturation voltage: 1.65 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 80 A Pd - Power Dissipation: 27...
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Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Package/Case:TO-220-3 Installation style: Through Hole Configuration:Single Collector-emitter maximum voltage VCEO: 600 V Collector-emitter saturation voltage: 1.5 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 24 A Pd - Power Dissipation: 11...
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Manufacturer: Infineon Product Category: IGBT Transistor Technology: Si Package/Case:TO-220-3 Installation style: Through Hole Configuration:Single Collector-emitter maximum voltage VCEO: 650 V Collector-emitter saturation voltage: 1.95 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 74 A Pd - Power Dissipation: 250 W Minimum ope...
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Manufacturer: Infineon Product Category: IGBT Transistor RoHS: Details Technology: Si Package/Case:TO-247-3 Installation style: Through Hole Configuration:Single Collector-emitter maximum voltage VCEO: 1200 V Collector-emitter saturation voltage: 2.05 V Gate/Emitter Maximum Voltage: 20 V Continuous collector current at 25 C: 50 A Pd - Power Dissipation: ...
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