TLV2782AID Data Sheet Manufacturer: Texas Instruments Product Category: Operational Amplifiers - Operational Amplifiers RoHS: Details Installation style: SMD/SMT Package/Case: SOIC-8 Supply Voltage - Maximum: 3.6 V Output current per channel: 23 mA Number of channels: 2 Channel GBP-Gain Bandwidth Product: 8 MHz SR - Slew rate: 5 V/us CMRR -...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector-emitter maximum voltage VCEO: 1200 V Continuous collector current at 25 C: 40 A Package/Case: Econo 2 Minimum operating temperature: - 40 C Maximum operating temperature: + 125 C Package: Tray Height: 17 mm Length: 107.5 mm Technology: Si Width: ...
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manufacturer Microchip Technology Manufacturer Part Number AT90CAN32-16AUR describe IC MCU 8BIT 32KB FLASH 64TQFP Compliance with Lead-Free Requirements / Compliance with Restriction of Hazardous Substances Directive (RoHS) Specifications Lead-free / Compliance with Restriction of Hazardous Substances Directive (RoHS3) Specifications ? Moistu...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: 3-Phase Collector-emitter maximum voltage VCEO: 1200 V Collector-Emitter Saturation Voltage: 2.1 V Continuous collector current at 25 C: 100 A Gate-Emitter Leakage Current: 100 nA Pd-Power Dissipation: 5.15 W Package/Case: Econo 3 Minimum operating tempera...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector-emitter maximum voltage VCEO: 1200 V Continuous collector current at 25 C: 320 A Package/Case: 62 mm Minimum operating temperature: - 40 C Maximum operating temperature: + 150 C Package: Tray Height: 30.5 mm Length: 106.4 mm Technology: Si Width:...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector-emitter maximum voltage VCEO: 1200 V Continuous collector current at 25 C: 480 A Package/Case: 62 mm Minimum operating temperature: - 40 C Maximum operating temperature: + 125 C Package: Tray Height: 30.9 mm Length: 106.4 mm Technology: Si Width:...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector-emitter maximum voltage VCEO: 1200 V Collector-Emitter Saturation Voltage: 2.15 V Continuous collector current at 25 C: 105 A Gate-Emitter Leakage Current: 400 nA Pd-Power Dissipation: 355 W Package/Case: Econo 3 Minimum operating temperature...
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Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Array 7 Collector-emitter maximum voltage VCEO: 1200 V Continuous collector current at 25 C: 39 A Package/Case: EASY2B Minimum operating temperature: - 40 C Maximum operating temperature: + 150 C Package: Tray Height: 12 mm Length: 56.7 mm Series: IGBT4 Technology: Si Width: ...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector-emitter maximum voltage VCEO: 1200 V Continuous collector current at 25 C: 140 A Package/Case: Econo 3 Minimum operating temperature: - 40 C Maximum operating temperature: + 125 C Package: Tray Height: 17 mm Length: 122 mm Technology: Si Width: 6...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Collector-emitter maximum voltage VCEO: 1200 V Collector-Emitter Saturation Voltage: 2.15 V Continuous collector current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Pd-Power Dissipation: 700 W Package/Case: Econo 3 Minimum operating temperature: - 40 C Maximum op...
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Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector-emitter maximum voltage VCEO: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous collector current at 25 C: 150 A Gate-Emitter Leakage Current: 100 nA Pd-Power Dissipation: 20 mW Package/Case: EconoPIM 3 Minimum operating tempe...
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