Manufacturer: Cree, Inc. Product Category: RF Amplifier Shipping Restrictions: Mouser does not currently sell this product in your region. RoHS: Details Installation style: SMD/SMT Package/Case: 0.5 in x 0.5 in Type: RF Power Amplifier Technology: GaN SiC Operating frequency: 20 MHz to 6000 MHz P1dB - Compression point: - Gain: 17 dB Operating supply vo...
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QPA4263C: SiGe amplifier. Company advantage inventory. The QPA4263C is a high performance SiGe MMIC amplifier Utilize Darlington configuration and patented active Biased network. Active bias network provides stable Current varies with Beta of temperature and process. The QPA4263C is designed to operate directly from a 3V supply Compared to typical values, no step-dow...
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TL432BIDBZRG4 NEXPERIA TL431BMFDT 2.495V-36V, SOT-23-3 original spot import TL432BIDBZRG4 product detailed specifications RohsLead free / RoHS Compliant Standard package 3,000 Reference type Shunt, Adjustable, Precision Voltage - Output power 2.495 V ~ 36 V Tolerance ±0.5%_Temp Coefficient 34ppm/°C Typical Voltage - Input 2.495 V ~ 36 ...
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Manufacturer: Cree, Inc. Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors RoHS: Details Transistor Type: HEMT Technology: GaN Gain: 14 dB Transistor Polarity: N-Channel Vds-drain-source breakdown voltage: 120 V Vgs-gate-source breakdown voltage: - 10 V to 2 V Id-Continuous Drain Current: 6 A Output power: 55 W Maxim...
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Manufacturer: Cree, Inc. Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors RoHS: Details Transistor Type: HEMT Technology: GaN Gain: 15dB Transistor Polarity: N-Channel Vds-drain-source breakdown voltage: 120 V Vgs-gate-source breakdown voltage: - 10 V to 2 V Id-Continuous Drain Current: 4.5 A Output power: 45 W Maxi...
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CGHV1J006D CGHV1J070D CGHV60075D5 CGHV50200F CGHV1J025D CMPA0060025F CMPA601C025D CMPA2560025F CMPA0060002F CGHV96050F2 CGH40045F CGH40035F CMPA0060025D CGH55030F2/P2 CGH21240F CGH40180PP CGH40025F/P CGH40120F CGH40045F/P CGH40035F/P CGH600008D CGHV50200F
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Manufacturer: Cree, Inc. Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors RoHS: Details Transistor Type: HEMT Technology: GaN Gain: 14.5 dB Transistor Polarity: N-Channel Vds-drain-source breakdown voltage: 120 V Vgs-gate-source breakdown voltage: - 10 V to 2 V Id-Continuous Drain Current: 1.5 A Output power: 12.5 W ...
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Manufacturer: Cree, Inc. Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors RoHS: Details Transistor Type: HEMT Technology: GaN Gain: 13 dB Transistor Polarity: N-Channel Vds-drain-source breakdown voltage: 120 V Vgs-gate-source breakdown voltage: - 10 V to 2 V Id-Continuous Drain Current: 0.75 A Output power: 9 W Max...
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Manufacturer: Cree, Inc. Product Category: RF Amplifier RoHS: Details Installation style: Screw Package/Case: - Type: Power Amplifier Technology: GaN Operating Frequency: 8.5 GHz to 11 GHz P1dB - Compression Point: 45.8 dBm Gain: 16 dB Operating supply voltage: 28 V NF—Noise Figure: - Test frequency: - OIP3 - Third-Order Intercept Point: - Operati...
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The company's main operating and agent brands are ALTERA, XILINX, TI, AD, Fairchild, ST, NXP, LATTICE, SEMTECH, AIROHA, MSTAR, RENESAS, INFINEON, IR, MAXIM, ON, Rohm, SHARP, VISHAY, MINI, Samsung samsung , Hynix SK hynix, Micron, Toshiba Toshiba, SanDisk Sandisk, Nanya Nanya, Kingston Kingston...
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The company's main operating and agent brands are ALTERA, XILINX, TI, AD, Fairchild, ST, NXP, LATTICE, SEMTECH, AIROHA, MSTAR, RENESAS, INFINEON, IR, MAXIM, ON, Rohm, SHARP, VISHAY, MINI, Samsung samsung , Hynix SK hynix, Micron, Toshiba Toshiba, SanDisk Sandisk, Nanya Nanya, Kingston Kingston...
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