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2022-09-23 11:12:17
The VN5016AJ-E is a monolithic device manufactured using STMicroelectronics VIPower technology
Output Current: 40A 3.0V CMOS Compatible Input Current Sensing Disable Proportional Load Current Sensing Optimized for electromagnetic emissions, reverse battery protection in accordance with European Directive 2002 /95/EC The VN5016AJ-E is a monolithic device manufactured with STMicroelectronics VIPower technology. It is used to drive resistive or inductive loads that are grounded on one side. The unit integrates an analog current sensor that outputs a current proportional to the load current (according to the ratio). When CS_DIS is driven high, the current sense pin is in a high impedance state. The output current limit protects the device in overload conditions. In the event of a long overload duration, the device limits the dissipated power to a safe level until a thermal shutdown intervenes. Thermal shutdown with automatic restart allows equipment to resume normal operation as soon as the fault condition disappears.
block diagram
Current and Voltage Conventions
Current and Voltage Conventions Application Schematic
Anti-battery ground protection network solution 1: Resistor in ground wire (RGND only). This can be used for any type of load.
Below are instructions on how to size the RGND resistor.
1) RGND≤600mV/(max(open).
2) VCC(/VCC)/(- of) where - is the DC reverse ground pin current and can be found in the Absolute Maximum Ratings section of the device's datasheet.
The power dissipation in RGND (when VCC < 0: in reverse battery case) is:
PD=(-VCC)/RGND2
This resistor can be shared among several different HSDs. Note that this resistor value should be calculated using equation (1), where (on)max becomes the sum of the maximum on-state currents of the different devices.
Note that if the microprocessor ground is not shared by the device ground, then RGND will have a shift (is(on)max*RGND) in the input threshold and the state output value. In the case of multiple high-side drivers sharing the same RGND, this shift will vary based on the number of devices.
If the calculated power dissipation results in a large resistor or multiple devices must share the same resistor, ST recommends solution 2 (see below).
Solution 2: Diode (DGND) in the ground wire.
If the device drives an inductive load, a resistor (R=1kΩ) should be connected in parallel to DGND. Ground this small signal diode can be safely shared among several different HSDs. Also in this case, if the microprocessor ground is not shared with the device ground, the presence of the ground network will create a shift (j600mV) in the input threshold and state output values. This offset does not change if multiple HSDs share the same diode/resistor network.
Load Dump Protection D (Voltage Transient Suppressor) is required if the load dump peak voltage exceeds the VCC maximum DC rating. The same applies if the device is exposed to transients on the VCC line greater than those shown in the ISO T/R 7637/1 table. µldC I/O Protection:
If a ground protection network is used and there is a negative transient on the VCC line, the control pin will be pulled negative. ST recommends inserting a resistor (Rprot) in the line to prevent the μC I/O pins from locking up.
The value of these resistors is a compromise between the leakage current of the μC and the current required by the HSD I/Os (input level compatibility) (latching limited to the μC I/Os).
-VCCpeak/Ilatchup≤Rprot≤(VOHμC-VIH-VGND)/IIHmax calculation example:
For VCCpeak=-100V and Ilatchup≥20mA; VOHμC≥4.5V 5kΩ≤R≤65kΩ. The recommended Rvalue for protection is 10kΩ. Protect