General Instructions

These n-channel enhancement mode power FETs are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is particularly suited to minimize on-resistance, provide superior switching performance, and withstand avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high voltage dc/dc converters and efficiency switching control of DC motors.

feature

70A, 80V, rds(on)=0.017Ω@VGS=10V Low gate charge (75 NC typical) Low CRS (180 pF typical) Fast switching 100% avalanche test improves dv/dt capability

175°C Maximum Junction Temperature Rating

notes:

1. Repetitive Ratings: Maximum Junction Temperature Limit Pulse Width

2.L=0.32mH, IAS=70A, VDD=25V, RG=25Ω, startup TJ=25°C

3.ISD≤70A, di/dt≤300A/µs, VDD≤BVDSS, startup TJ=25°C

4. Pulse test: pulse width ≤ 300 microseconds, duty cycle ≤ 2%

5. Basically independent of operating temperature Body diode forward voltage changes with source current and temperature

Disclaimer

Fairchild reserves the right to make changes without notice to products designed to improve reliability, functionality or design. Fairchild assumes no liability arising out of the application or use of any product or circuit described herein; it neither assigns any license under its patent rights nor the rights of others.

life insurance policy

Fairchild's product is not authorized for use as a critical component of life support A device or system not expressly approved in writing by Fairchild Semiconductor International Life Support Device or System means a device or system that is (a) intended for surgical implantation into the body, or (b) Supports or sustains life, or (c) fails to perform as provided on the label when properly used in accordance with the directions for use, which can reasonably be expected to cause significant harm to the user. A critical component is any part of a life support device or system that cannot reasonably be expected to cause the life support device or system to fail, or affect its safety or effectiveness.

notes:

1. Repetitive Ratings: Maximum Junction Temperature Limit Pulse Width

2.L=0.32mH, IAS=70A, VDD=25V, RG=25Ω, startup TJ=25°C

3.ISD≤70A, di/dt≤300A/µs, VDD≤BVDSS, startup TJ=25°C

4. Pulse test: pulse width ≤ 300 microseconds, duty cycle ≤ 2%

5. Basically irrelevant to the working temperature