Data List FCP190N65F

Standard package 800

Packaging Pipe Fittings

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series FRFET™, SuperFET™ II

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 650V

Current at 25°C - Continuous Drain (Id) 20.6A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

On-resistance (max) 190 milliohms @ 10A, 10V at different Id, Vgs

Vgs(th) (max) 5V @ 2mA at different Ids

Gate charge (Qg) (max) 78nC @ 10V at different Vgs

Vgs (max) ±20V

Input Capacitance (Ciss) (Max) 3225pF @ 25V at different Vds

FET function-

Power Dissipation (Max) 208W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Package/Case TO-220-3

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