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2022-09-24 17:43:29
Agent BSS123 imported original spot
Data List BSS123;_Standard Package 3,000
Packaging standard tape and reel
Active Part Status
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
series-
Other namesBSS123-TPMSTR
Specification
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 100V
Current - Continuous Drain (Id) 170mA at 25°C
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
On-resistance (max) 6 ohm @ 170mA, 10V at different Id, Vgs
Vgs(th) (max) 2.8V @ 250μA at different Id
Gate charge (Qg) (max) 2nC @ 10V at different Vgs
Vgs (max) ±20V
Input Capacitance (Ciss) (max) 60pF @ 25V at different Vds
FET function-
Power dissipation (max) 350mW
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package SOT-23
Package/Enclosure TO-236-3, SC-59, SOT-23-3