Data List IRLR6225PBF

Standard Package 2000

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series HEXFET?

Other namesIRLR6225TRPBFTR

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 20V

Current at 25°C - Continuous Drain (Id) 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V

On-resistance (max) 4 milliohms @ 21A, 4.5V at different Id, Vgs

Vgs(th) (max) 1.1V @ 50μA at different Id

Gate charge (Qg) (max) 72nC @ 4.5V at different Vgs

Vgs (max) ±12V

Input Capacitance (Ciss) (max) 3770pF @ 10V at different Vds

FET function-

Power Dissipation (Max) 63W (Tc)

Operating temperature -50°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-252-3, DPak (2 leads + tab), SC-63

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