Data List IRF7862PbF

Standard package 4000

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series HEXFET?

Other namesIRF7862TRPBFTR

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 30V

Current at 25°C - Continuous Drain (Id) 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

On-resistance (max) 3.7 milliohms @ 20A, 10V at different Id, Vgs

Vgs(th) (max) 2.35V @ 100μA at different Ids

Gate charge (Qg) (max) 45nC @ 4.5V at different Vgs

Vgs (max) ±20V

Input Capacitance (Ciss) (max) 4090pF @ 15V at different Vds

FET function-

Power Dissipation (Max) 2.5W (Ta)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Package/Case 8-SOIC (0.154, 3.90mm wide)

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