-
2022-09-24 17:43:29
Agent SI2302CDS-T1-GE3 imported original spot
Data List SI2302CDS;_Standard Package 3,000
Packaging standard tape and reel
Active Part Status
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series TrenchFET?
Other namesSI2302CDS-T1-GE3TR
SI2302CDST1GE3
Specification
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 20V
Current at 25°C - Continuous Drain (Id) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
On-resistance (max) 57 milliohms @ 3.6A, 4.5V at different Id, Vgs
Vgs(th) (max) 850mV @ 250μA at different Id
Gate charge (Qg) (max) 5.5nC @ 4.5V at different Vgs
Vgs (max) ±8V
FET function-
Power dissipation (max) 710mW (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package SOT-23-3 (TO-236)
Package/Enclosure TO-236-3, SC-59, SOT-23-3