BUL39D is a bipo...

  • 2022-09-23 12:36:28

BUL39D is a bipolar transistor

The BUL39D is an integrated anti-parallel collector-emitter diode with low dynamic parameter propagation, high voltage capability, very high turn-off speed and reliable operation with minimal lot-to-lot spread. The device uses high-voltage fabrication of high-epitaxial multilayer epitaxial planar technology to switch speed RBSOA while maintaining width. The device is designed for use with electronic transformers for halogen lamps.

feature

Integrated Anti-Parallel Collector-Emitter Diode

High pressure capability

Low propagation of dynamic parameters

Minimum batch spacing for reliable operation

Very high switching speed

application

Electronic Transformer for Halogen Lamp

Internal schematic

Absolute Maximum Ratings

Symbolic parameter value units

VCES collector-emitter voltage (VBE = 0) 850 V.

VCEO collector-emitter voltage (IB = 0) 450 V.

VEBO Emitter-Base Voltage (IC=0) 9 V.

IC Collector currently 4 A.

ICM collector peak current (tP < 5 ms) 8 A.

IB reference current 2 A.

IBM Base peak current (tP < 5 ms) 4 A.

Total dissipation of Ptot 70 W at Tc = 25°C

Tstg storage temperature -65 to 150 °C

TJ Max. Operating Junction Temperature 150°C

Electrical Characteristics Table

test circuit

Inductive load switch test circuit diagram

1) Quick electronic switch

2) Non-inductive resistor

3) Fast recovery rectifier

To meet environmental requirements, ST offers these equipment packages as ECOPACK®. These packages feature lead-free secondary interconnects. The category 2nd level interconnect marking on package and inner box labels conforms to JEDEC standard JESD97. Maximum ratings and soldering-related conditions are also marked on the inner box label.