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2022-09-24 17:43:29
Agent IPT012N08N5 imported original spot
Data List IPT012N08N5;_Standard Package 2,000
Packaging standard tape and reel
Active Part Status
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series OptiMOS?
Other names IPT012N08N5ATMA1TR
SP001227054
Specification
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 80V
Current at 25°C - Continuous Drain (Id) 300A (Tc)
Driving voltage (Max Rds On, Min Rds On) 6V, 10V
On-resistance (max) 1.2 milliohms @ 150A, 10V at different Id, Vgs
Vgs(th) (max) 3.8V @ 280μA at different Ids
Gate charge (Qg) (max) 223nC @ 10V at different Vgs
Vgs (max) ±20V
Input Capacitance (Ciss) (Max) 17000pF @ 40V at different Vds
FET function-
Power Dissipation (Max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package PG-HSOF-8-1
Package/Enclosure 8-PowerSFN