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2022-09-24 17:43:29
FGA60N65SMD
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Manufacturer: ON Semiconductor
Product Category: IGBT Transistor
RoHS: Details
Technology: Si
Package / Box: TO-3PN
Installation style: Through Hole
Collector-emitter maximum voltage VCEO: 650 V
Collector-emitter saturation voltage: 1.9 V
Gate/Emitter Maximum Voltage: 20 V
Continuous collector current at 25 C: 120 A
Pd - Power Dissipation: 600 W
Series: FGA60N65SMD
Package:Tube
Trademark: ON Semiconductor / Fairchild
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Packing Quantity: 450
Subcategory: IGBTs
Unit weight: 6.401 g