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2022-09-24 17:55:53
FMH23N50E imported original spot fake one penalty ten
Product Category: N-Channel Power MOSFET
Package: TO-3P
Transistor Type: 1 N-Channel
Vds-drain-source breakdown voltage: 900 V
Id-Continuous Drain Current: Rds On-Drain-Source On Resistance: 0.21 Ohms
Vgs - Gate-Source Voltage: ±30 V
Qg-gate charge: 11 nC
Working temperature: - 55℃——+150℃
Pd-Power Dissipation: 315 W
N-channel MOSFET FMH23N50E features a narrow frequency band that maintains low power consumption and low noise, high avalanche ruggedness and gate threshold voltage, and is widely used in switching regulators, UPS (uninterruptible power supplies) and DC-DC converters .
FUJI Fuji FMH23N50E N-channel power MOSFET
In 1923, Fuji Electric Group was formed by Furukawa Electric Co., Ltd. of Japan and Western Germany.