BTS660P is an N-channel vertical power FET with charge pump, current control input and load diagnostic feedback current sense, integrated on Smart SIPMOS chip technology. Provides embedded protection. Intelligent high-side high-current power switch Self-turning through power MOSFET Reverse battery protection Overload protection Current limiting Short circuit protection Over-temperature protection Over-voltage protection (including load dump) Reverse Current Operation Load Current Detection Diagnostic Feedback Through Current Detection Open Load Detection Vbb Protection 2) Electrostatic Discharge (ESD) Protection.

feature

Overload protection

current limit

Short circuit protection

Over temperature protection

Overvoltage protection (including load dump)

Clamps negative voltages at the output

Inductive loads are quickly switched off 1)

Low ohm reverse current operation

Diagnostic feedback with load current sensing

Open load detection with current detection

Vbb protection lost 2)

Electrostatic discharge (ESD) protection applications

Power switch feedback with current sense diagnostics up to 48V DC grounded loads

Best for loads with high inrush current like lamps and motors; all types of resistive and inductive loads

Replaces electromechanical relays, fuses and discrete circuits

Overvoltage protection Vbb (AZ) 70 V.

Output clamp VON (CL) 62 V.

Operating voltage Vbb(on) 5.0...58 V.

On-resistance RON9mΩ

Load current (ISO) IL (ISO) 44 A.

Short-circuit current limit IL(SC) 90 A.

Current detection rate IL: IIS 13 000

BTS660P Data Sheet

Maximum ratings at Tj = 25°C unless otherwise noted

Not shorting all outputs will greatly increase on-resistance, reducing peak current capability and reducing current sense accuracy Otherwise, if using a pin instead of RON, add up to 0.7mΩ to RON (depending on the length of the pin used)

Label. The RI load dump tests the internal resistance of the pulse generator. According to ISO 7637-1 and DIN 40839, set up a VLoad dump without connecting the DUT to the generator.

The BTS660P can easily connect two or more devices in parallel to increase the load current capability.

The typical RON of the SMD version is about 0.2mΩ due to l≈2mm, more

A low ohmic short to Vbb reduces the output current IL and thus can be detected by the sense current IIS. Power transistor "OFF", potential defined by external impedance.