EMX1T2R

Manufacturer: ROHM Semiconductor

Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)

RoHS: Details

Installation style: SMD/SMT

Package/Case: EMT-6

Transistor Polarity: NPN

Configuration: Dual

Collector-emitter maximum voltage VCEO: 50 V

Collector-Base Voltage VCBO: 60 V

Emitter-Base Voltage VEBO: 7 V

Collector-Emitter Saturation Voltage: 400 mV

Maximum DC collector current: 150 mA

Pd - Power Dissipation: 150 mW

Gain bandwidth product fT: 180 MHz

Minimum Operating Temperature:-

Maximum operating temperature: + 150 C

Series:EMX1

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: ROHM Semiconductor

Collector Continuous Current: 150 mA

DC Collector/Base Gain hfe Min: 120

DC current gain hFE max: 560

Height: 0.5 mm

Length: 1.6 mm

Product Type: BJTs - Bipolar Transistors

8000

Subcategory: Transistors

Technology: Si

Width: 1.2 mm

Part number alias: EMX1

Unit weight: 22 mg

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