IRF9Z24NPBF

Data List IRF9Z24NPbF;_Standard Package 50

Packaging Pipe Fittings

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series HEXFET?

Other names*IRF9Z24NPBF

SP001555934

Specification

FET type P channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 55V

Current - Continuous Drain (Id) (at 25°C) 12A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

Different Id, Rds On (max) at Vgs 175 milliohms @ 7.2A, 10V

Vgs(th) (max) at different Ids 4V @ 250μA

Gate charge (Qg) at different Vgs (max) 19nC @ 10V

Vgs (max) ±20V

Input Capacitance (Ciss) at Vds (Maximum) 350pF @ 25V

FET function-

Power Dissipation (Max) 45W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Supplier Device Package TO-220AB

Package/Case TO-220-3

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