P-channel MOS tube NTR4171PT1G 30V SOT-23-3 (TO-236) 100% imported original spot special supply

NTR4171PT1G product detailed specifications

Rohs Lead free / RoHS Compliant

Standard package 3,000

FET Type MOSFET P-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (No.) @ 25°C 2.2A

Rds (max) @ ID, VGS 75 mOhm @ 2.2A, 10V

VGS (TH) (max) @ Id 1.4V @ 250µA

Gate Charge (Qg) @ VGS 15.6nC @ 10V

Input Capacitor (Ciss) @ 720pF of Vds @ 15V

Power - 480mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

channel type P

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 3.5 A

RDS - at 75@10V mOhm

Maximum gate-source voltage ±12 V

Typical turn-on delay time 9 ns

Typical rise time 16 ns

Typical turn-off delay time 25 ns

Typical fall time 22 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±12

EU RoHS Directive Compliant

Maximum working temperature 150

Standard package name SOT-23

Minimum operating temperature -55

Package Tape and_Reel

Maximum drain-source resistance 75@10V

Maximum drain-source voltage 30

Number of components per chip 1

Supplier Package SOT-23

Maximum power dissipation 1250

Maximum continuous drain current 3.5

Number of pins 3

Lead Shape Gull-wing

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 2.2A (Ta)

Vgs(th) (max) @ Id 1.4V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS 75 mOhm @ 2.2A, 10V

FET Type MOSFET P-Channel, Metal Oxide

Power - 480mW max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS 720pF @ 15V

Gate Charge (Qg) @ VGS 15.6nC @ 10V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesNTR4171PT1GOSCT

CategoryPower MOSFET

Configure Single

Dimensions 3.04 x 1.4 x 1.01mm

Height 1.01mm

Length 3.04mm

Maximum drain-source resistance 150 mΩ

Maximum operating temperature +150 °C

Maximum power dissipation 1.25 W

Minimum operating temperature -55 °C

Packaging Type SOT-23

Typical Gate Charge @ VGS 15.6 nC @ -10 V

Typical Input Capacitance @ VDS 720 pF @ -15

Width 1.4mm

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity P-Channel

Source breakdown voltage +/- 12 V

Continuous Drain Current - 3.5 A

Forward Transconductance - Min 7 S

Installation style SMD/SMT

RDS(ON) 90 mOhms

Power dissipation 1.25 W

Package/Case TO-236

Rise time 16 ns

Drain-source breakdown voltage - 30 V

RoHS RoHS Compliant

Fall time 22 ns

Drain current (max) 3.5 A

Frequency (max) Not Required MHz

Gate-source voltage (max) ?12 V

Output Power (Max) Not Required W

Noise Figure Not Required dB

Drain-source on-resistance 0.075 ohm

Operating temperature range -55C to 150C

Polarity P

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_Drain-source turn-on voltage 30 V

Power Gain Not Required dB

Arc hardeningNo

Continuous Drain Current Id :-3.5A

Drain Source Voltage Vds :-30V

On Resistance Rds(on):0.05ohm

Rds(on) Test Voltage Vgs :-10V

Threshold Voltage Vgs:-1.15V

Power consumption: 1.25W

Operating Temperature Min :-55°C

Operating Temperature Max :150°C

Transistor Case Style :SOT-23

No. of Pins :3

MSL :MSL 1 - Unlimited

SVHC : No SVHC (16-Dec-2013)

Weight (kg) 0.000033

Tariff No. 85412900

associated RE906

80-4-5

On April 13, Yangtze Memory, a subsidiary of Tsinghua Unigroup, announced that it has successfully developed two 128-layer products, namely 128-layer QLC 3D NAND flash memory (model: X2-6070) and 128-layer 512Gb TLC (3bit/cell) flash memory chip. . The former has been verified on SSD and other terminal storage products from many controller manufacturers including Phison and Lianyun, and the two products can meet the needs of different application scenarios.

As early as last September, YMTC started mass production of China's first 64-layer 3D NAND flash memory based on the Xtacking architecture. Thanks to the optimization of 3D NAND control circuits and memory cells by the Xtacking architecture, its 64-layer TLC products have performed well in the fields of storage density, I/O performance, and reliability, and have been widely recognized by the industry after they were launched.

In the 128-layer series, Xtacking has been fully upgraded to 2.0. Since the peripheral circuits and the memory cells use independent manufacturing processes, more advanced manufacturing processes can be used for CMOS circuits. In addition, on the premise that the chip area does not increase, Xtacking 2.0 also brings better scalability to 3D NAND, further releasing the potential of 3D NAND flash memory. QLC products pay more attention to "read performance", and at the same time, "write performance" cannot be left behind. Therefore, the operation of array read and write is increased in the layout, which can have a better continuous read and write speed as a basis. Through further optimization, this chip The 128-layer QLC product has achieved the industry's first in three dimensions, including the highest area density, the highest single-chip capacity of 1.33Tb, and the industry's fastest 1.6Gb/s I/O.

Compared with traditional HDD, QLC SSD has more performance advantages. In the consumer field, QLC will take the lead in popularizing large-capacity U disks, flash memory cards and SSDs. At the enterprise level, QLC SSDs will bring lower read latency to servers and data centers, making them more suitable for read-intensive applications in AI computing, machine learning, real-time analytics, and big data.

NAND Flash is a strong cyclical industry that is sensitive to the balance of supply and demand and has extremely fierce cost competition. In the past year, the main production capacity of major manufacturers has switched from 64/72-layer NAND Flash to 92/96-layer stacked NAND Flash. It is understood that global bit shipments reached 309 billion GB in 2019, a 35% increase over 2018.

It is reported that the monthly production capacity of the first phase of the Yangtze River Storage production line is 100,000 pieces, and the production capacity has been climbing since this year. As for the time of mass production, in line with the above-mentioned capacity, 128-layer NAND flash memory will be mass-produced from the end of this year to the first half of next year.

Hong Kong Xinrui guarantees original imported spot

Xinrui Electronics (Hong Kong) Co., Ltd., 18 years of professional component distributors (authorized and non-authorized brands), one-stop terminal manufacturer support: (quality assurance and integrity management) is the company's commitment to provide customers with brand original semiconductors, electronics Component terminal supporting market, focusing on ESD/TVS electrostatic protection diodes, LDO low-power voltage regulators, MOS tubes, battery charging and management power supplies, LEDs, optocouplers, resistors and capacitors, PCB solutions (wireless Bluetooth solutions, One-stop Bluetooth sports solution, speaker, wireless power bank).

Main products: ESD electrostatic diodes, TVS diodes, battery charging and management power supplies, MOS tubes, LDO low-power voltage regulators.

Company: Xinrui Electronics (Hong Kong) Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ:3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

Part of the company's stock:

TLV70433DBVR、TP4101、TP5100、TP4056、RT9013-33PB、TPS73618DBVR、MIC5255-3.0YM5、CDSOT23-T36C、CDSOT23-24C、TL431CDBZR、TL431IDBZR、TLV1117CDCYR、LM317EMPX、NCP1117ST33T3G、NCP1117ST50T3G、PESD5V0V1BL、PESD5V0V1BSF、PESD2CAN、PESD5V0S1BA、PESD12VS2UT、PESD15VL2BT , PESD36VS2UT, PESD3V3L1BA, PESD24VL2BT, IP4220CZ6, IP4223CZ6, BCP56-16, BCP51-16, BSN20, uClamp0511T.TCT, SRV05-4.TCT, RCLAMP0531T.TCT, RCLAMP0502A.TCT, SD05C.TCT, SRAMP05.TCT 、ESD5Z2.5T1G、ESD5Z3.3T1G、CM1213A-01SO、CM1213A-04SO、NTR4501NT1G、NTR4502PT1G、NTR4170NT1G、NTR4171PT1G、RLST23A032C、RLST23A0122C、RLST23A052C、PRTR5V0U2X、GBLC03CI-LF-T7、GBLC03C-LF-T7、GBLC05CI-LF-T7 , GBLC05C-LF-T7, GBLC08CI-LF-T7, GBLC08C-LF-T7, GBLC12CI-LF-T7, GBLC12C-LF-T7, GBLC15CI-LF-T7, GBLC24CI-LF-T7, GBLC24C-LF-T7, PSD03C -LF-T7, PSD05-LF-T7, PSD05C-LF-T7, PSD08C-LF-T7, PSM712-LF-T7, AO3400, AO3400A, AO3401A, AO3402, TPSMB6.8CA-E3/52, TPSMB6.8A, TPSMB47A , TPSMB43A, TPSMB39A, TPSMB36A, TPSMB33A, TPSMB30A, STTH208, etc.

For more models, please inquire:

Xinrui Electronics (Hong Kong) is a professional supplier of integrated circuits and has many years of sales experience in our bank!

With a large stock of stock, integrity-based, customer first, the quality of products for customers!

Due to the large number of company models, it is impossible to upload them one by one. If you can't find the product you want on the website, please contact the salesperson. Our company can provide electronic components distribution service.

Company: Xinrui Electronics (Hong Kong) Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ:3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

Hong Kong Xinrui guarantees original imported spot

NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G NTR4171PT1G

In the North American TV market, TCL surpassed Samsung Electronics in sales for the first time and took the first place in the market share.

Korean media "etnews" pointed out that TCL has benefited from TV brands such as Samsung Electronics, LG, and Sony who abandoned the low-end market.

According to the statistics of IHS Markit, a market research company, TCL's TV shipments in North America in the first quarter of this year increased by 112% over the same period last year, ranking first in market share. The rate increased significantly from 16% last year to 26.2%, setting a record for North American shipments. Samsung Electronics' performance declined over the same period, with its North American market share falling from 28% last year to 21.8%, ranking second.

As Samsung Electronics, LG, and Sony have successively withdrawn from the low-end and mid-end markets with low profitability, TLC took the opportunity to expand the market with a mid-to-low-end strategy and achieved results in terms of sales. Relevant sources in the TV industry explained that mainstream TV brands have made structural adjustments to TVs under 40 inches, enabling Chinese companies to quickly erode the TV market.

Although Samsung Electronics only took the second place in terms of market share in terms of sales, based on sales, Samsung Electronics' market share in North America was as high as 36.9%, which was more than twice the difference from the second place, and it was the champion.

In the context of deepening trade disputes between China and the United States, TCL won the first throne of market share and attracted attention from the outside world. A person from IHS Markit said that in the context of the deepening Sino-US trade dispute, the market share of TCL and other companies with manufacturing plants in China has grown significantly, but in the case of increasing uncertainties, considering that TV profits are lower than other home appliances, tariffs easier to affect profits.