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2022-09-24 18:08:59
NDSH25170A
1700 V Silicon Carbide (SiC) Diode
ON Semiconductor's diodes have temperature-independent switching characteristics and excellent thermal performance
Image of ON Semiconductor's 1700 V Silicon Carbide (SiC) Diodes ON Semiconductor's 1700 V SiC Schottky diodes use technology that provides higher switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics and excellent thermal performance make SiC the next-generation power semiconductor. System advantages include efficient, fast operating frequency, higher power density, lower EMI, and lower system size and cost.
feature
Easy to parallel
High inrush current capacitors
Maximum Junction Temperature: +175°C
No reverse recovery / no forward recovery
higher switching frequency
Low forward voltage (VF)
positive temperature coefficient
AEC-Q101 and PPAP Compliant
Application field
Automotive HEV-EV DC-DC Converter
Car HEV-EV car charger
industrial power
perfluorinated compounds
solar
ups
welding