Silicon carbide (SiC) is a relatively new semiconductor material. To get started, let's take a look at its physical properties and characteristics.

Physical Properties and Characteristics of SiC

SiC is a compound semiconductor material composed of silicon (Si) and carbon (C). Its binding force is very strong, and it is very stable in thermal, chemical and mechanical aspects. SiC exists in various polytypes (polymorphs) with different physical property values. 4H-SiC is most suitable for power components. The table below is a comparison of Si and semiconductor materials that have often been heard in recent years.

The dielectric breakdown field strength of SiC is about 10 times higher than that of Si, and it can withstand high voltages from 600V to several thousand V. In this case, the impurity concentration can be increased and the thickness of the drift layer can be reduced as compared with the Si device. The resistance component of high withstand voltage power components is mostly the resistance of the drift layer, and the resistance value increases in proportion to the thickness of the drift layer. Since the drift layer of SiC can be thinned, high withstand voltage components with very low on-resistance per unit area can be produced. Theoretically, as long as the withstand voltage is the same, compared with Si, the drift layer resistance per unit area of SiC can be as low as 1/300.

Si power components mainly use minority carrier components (bipolar components) such as IGBTs (Insulated Gate Bipolar Transistors) in order to improve the problem of increased on-resistance caused by higher withstand voltages. However, due to the large switching loss and the problem of heat generation, there is a limit to the realization of high-frequency driving. Since SiC can increase the withstand voltage of high-speed majority carrier components such as Schottky barrier diodes and MOSFETs, it can achieve "high withstand voltage", "low on-resistance", and "high speed" at the same time.

At this time, the band gap is about 3 times that of Si, enabling operation at higher temperatures. At present, the operating temperature of 150°C to 175°C can be guaranteed due to the restriction of the heat resistance of the packaging, but with the development of packaging technology, it will be able to reach more than 200°C.

BM2SCQ124T-LBZ

BM2SCQ12xT-LBZ, BM2SCQ124 series

BM2SCQ123T-LBZ

BM2SCQ12xT-LBZ, BM2SCQ123 series

BM2SCQ122T-LBZ

BM2SCQ12xT-LBZ, BM2SCQ122 series

BM2SCQ121T-LBZ

BM2SCQ12xT-LBZ, BM2SCQ121 series

SCT2H12NZGC11

SCH2080KEC

SCH2080KE series

SCT2160KEC

SCT2280KEC

SCT2280KE

SCT2450KEC

SCT2450KE

C2M0040120D C2M0080120D C2M0025120D