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2022-09-24 18:08:59
FLASH memory AFND1208U1-CKAI original spot
AFND1208U1-CKAI: FLASH memory. Company advantage inventory.
Function overview
? power supply
-3.3V device (AFND1208U1) 2.7V ~ 3.6V
?organize
- Memory cell array: (64M + 2M) x 8 bits
Data Register: (512 + 16) x 8 bits
?Automatic programming and erasing
Page program: (512 + 16) x 8 bits
Block Erase: (16K + 512) Bytes = 32pages
?page read operation
- Page size: (512 + 16) Bytes
- Random access: 15us (max)
- Serial page access: 30ns (minimum)
?Fast write cycle time
- Program time: 200us (Typ.)
- Block erase time: 2ms (typ.)
? Write-back program operation
?- Fast page copy without external buffering
?Command register operation
?security function
?-OTP area, 16KB (32 pages)
? Hardware data protection
?- Program/Erase is locked during power transition
? Data integrity
?-Endurance: 100K program/erase cycles
? (with 1bit/528byte ECC)
?-Data retention period: 10 years
?Package
-AFND1208U1: Pb-free package
? 48-pin TSOP (12 x 20 / 0.5 mm pitch)
?48-ball FBGA: 9.0 x 9.0 x 1.0mm
?63-ball FBGA: 9.0 x 11.0 x 1.0mm
?Operating temperature
-Commercial grade: 0℃~70℃-Industrial grade: -40℃~85℃