ManufacturerVishay Siliconix

Manufacturer Part Number SI2301CDS-T1-GE3

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

Compliance with Lead-Free Requirements / Compliance with Restriction of Hazardous Substances Directive (RoHS) Specifications Lead-free / Compliance with Restriction of Hazardous Substances Directive (RoHS3) Specifications

Moisture Sensitivity Level (MSL) 1 (unlimited)

Original factory standard lead time 14 weeks

Detailed DescriptionSurface Mount Type-P-Channel-20V-3.1A(Tc)-860mW(Ta)-1.6W(Tc)-SOT-23-3(TO-236)

Standard package 3,000

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series TrenchFET?

Other namesSI2301CDS-T1-GE3TR

SI2301CDST1GE3

Specification

FET type P channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 20V

Current - Continuous Drain (Id) (at 25°C) 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V

Different Id, Rds On (max) at Vgs 112 milliohms @ 2.8A, 4.5V

Vgs(th) (max) at different Ids 1V @ 250μA

Gate charge (Qg) at different Vgs (max) 10nC @ 4.5V

Vgs (max) ±8V

Input Capacitance (Ciss) at Vds (Maximum) 405pF @ 10V

FET function-

Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Supplier Device Package SOT-23-3 (TO-236)

Package/Enclosure TO-236-3, SC-59, SOT-23-3

Advantageous supply:

M51450G

EL7536IYZ

EL7536IYZ-T7

SI2301CDS-T1-GE3

EL7536IYZ(BFAAA)

SN74AHC1G14DBVR

SI2301CDS-T1-GE3

SD1169

SRFE1169

AD620AN

24LC641

MRFA1600

MRA1600-6

MRF1600-2

PH1600-30

MRA1600-2

PH1600-32

PH1600-1.5

MRA1600-30

PH1600-6.5

S08K31

LVC16245A

LVC16244A

UF2010R

TA7201S

MRF136Y

ST9917

ATF10136

SI2301CDS-T1-GE3

M2557BM

PA7674

MGF1601

D1217UK

P9030MB

MRF9030S

MRF9030GR1

MRF9030MR1

MRF9030MBR1

MRF9030GNR1