SI4894BDY-T1-GE3 product detailed specifications

Standard Package 2,500

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (Number) @ 25°C 8.9A

Rds (max) @ ID, VGS11 mOhm @ 12A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS38nC @ 10V

Input Capacitor (Ciss) @ 1580pF of Vds @ 15V

Power - 1.4W max

Mounting Type Surface Mount

Pack/Box 8-SOIC (0.154, 3.90mm Width)

Supplier Device Package 8-SOICN

Packaging Tape & Reel (TR)

Packaging 8SOIC N

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 8.9 A

RDS - at 11@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 13 ns

Typical rise time 10 ns

Typical turn-off delay time 33 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Product TypeMOSFET

RoHSRoHS Compliant

Transistor Polarity N-Channel

Drain-source breakdown voltage 30 V

Source breakdown voltage +/- 20 V

Continuous drain current 8.9 A

Anti-drain source RDS(ON) 11 mOhms

Configure Single

Maximum operating temperature + 150 C

Installation style SMD/SMT

Package/Enclosure SOIC-8 Narrow

Package Reel

Fall Time 10 ns

Minimum Operating Temperature - 55 C

Power dissipation 1.4 W

Rise time 10 ns

Factory packing quantity 2500

Part number alias SI4894BDY-GE3

unit pack 0

MOQ 1

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C8.9A (Ta)

Vgs(th) (max) @ Id3V @ 250µA

Vendor Device Package 8-SOIC N

On-state Rds (max) @ Id, V GS11 mOhm @ 12A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 1.4W max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS1580pF @ 15V

Gate Charge (Qg) @ VGS38nC @ 10V

Package/Case 8-SOIC (0.154, 3.90mm Width)

RoHS Directive Lead free / RoHS Compliant

Other namesSI4894BDY-T1-GE3CT

RDS(ON) 11 mOhms

Gate-source voltage (max)? 20 V

Drain-source on-resistance 0.011 ohm

Operating temperature range -55C to 150C

Package Type SOIC N

Number of pins 8

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain-source turn-on voltage 30 V

Arc hardeningNo

SeriesSI4

BrandVishay Semiconductors

Trade nameTrenchFET

Technology Si