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2022-09-23 17:22:28
SI2337DS-T1-E3
category
Discrete Semiconductor Products
Transistor - FET, MOSFET - Single
manufacturer
Vishay Siliconix
series
TrenchFET
Package
Tape and Reel (TR)
Shear Band (CT)
Digi-Reel Custom Reel
product status
in stock
FET type
P channel
technology
MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)
80V
Current at 25°C - Continuous Drain (Id)
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
On-resistance (max) at different Id, Vgs
270 milliohms @ 1.2A, 10V
Vgs(th) (maximum) at different Ids
4V @ 250μA
Gate charge (Qg) at different Vgs (max)
17nC @ 10V
Vgs (max)
±20V
Input capacitance (Ciss) at different Vds (max)
500 pF @ 40 V
FET function
-
Power dissipation (max)
760mW (Ta), 2.5W (Tc)
Operating temperature
-50°C ~ 150°C (TJ)
installation type
Surface Mount Type
Supplier Device Packaging
SOT-23-3 (TO-236)
Package/Enclosure
TO-236-3, SC-59, SOT-23-3
Basic product number
SI2337