SI2337DS-T1-E3

  • 2022-09-23 17:22:28

SI2337DS-T1-E3

category

Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

manufacturer

Vishay Siliconix

series

TrenchFET

Package

Tape and Reel (TR)

Shear Band (CT)

Digi-Reel Custom Reel

product status

in stock

FET type

P channel

technology

MOSFET (Metal Oxide)

Drain-Source Voltage (Vdss)

80V

Current at 25°C - Continuous Drain (Id)

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

On-resistance (max) at different Id, Vgs

270 milliohms @ 1.2A, 10V

Vgs(th) (maximum) at different Ids

4V @ 250μA

Gate charge (Qg) at different Vgs (max)

17nC @ 10V

Vgs (max)

±20V

Input capacitance (Ciss) at different Vds (max)

500 pF @ 40 V

FET function

-

Power dissipation (max)

760mW (Ta), 2.5W (Tc)

Operating temperature

-50°C ~ 150°C (TJ)

installation type

Surface Mount Type

Supplier Device Packaging

SOT-23-3 (TO-236)

Package/Enclosure

TO-236-3, SC-59, SOT-23-3

Basic product number

SI2337