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2022-09-24 20:26:29
si3457cdv-t1-ge3 original factory
SI3457CDV-T1-GE3 PDF download
Standard Package 1
Series TrenchFET?
FET Type MOSFET P-Channel, Metal Oxide
FET Features Logic Level Gate
Drain to source voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25° C5.1A
On-state Rds (max) @ Id, Vgs @ 25° C74 milliohms @ 4.1A, 10V
Vgs(th) at Id (max) 3V @ 250μA
Gate Charge (Qg) @ Vgs15nC @ 10V
Input Capacitance (Ciss) @ Vds450pF @ 15V
Power - 3W max
Mounting Type Surface Mount
Package/Case 6-TSOP (0.065, 1.65mm wide)
Vendor Equipment Package 6-TSOP
Packaging Cut Tape (CT)
Other names SI3457CDV-T1-GE3CT Company address; Room 603, Building 2, Huakang Building, Zhenxing West Road, Futian District, Shenzhen Tel: 0755-82777855/82702619 QQ 1774550803 QQ 2924695115 / 13510175077 Contact Mr. Liu/Ms. Li