si3457cdv-t1-ge3 ori...

  • 2022-09-24 20:26:29

si3457cdv-t1-ge3 original factory

SI3457CDV-T1-GE3 PDF download

Standard Package 1

Series TrenchFET?

FET Type MOSFET P-Channel, Metal Oxide

FET Features Logic Level Gate

Drain to source voltage (Vdss) 30V

Current - Continuous Drain (Id) @ 25° C5.1A

On-state Rds (max) @ Id, Vgs @ 25° C74 milliohms @ 4.1A, 10V

Vgs(th) at Id (max) 3V @ 250μA

Gate Charge (Qg) @ Vgs15nC @ 10V

Input Capacitance (Ciss) @ Vds450pF @ 15V

Power - 3W max

Mounting Type Surface Mount

Package/Case 6-TSOP (0.065, 1.65mm wide)

Vendor Equipment Package 6-TSOP

Packaging Cut Tape (CT)

Other names SI3457CDV-T1-GE3CT Company address; Room 603, Building 2, Huakang Building, Zhenxing West Road, Futian District, Shenzhen Tel: 0755-82777855/82702619 QQ 1774550803 QQ 2924695115 / 13510175077 Contact Mr. Liu/Ms. Li