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2022-09-23 17:22:28
SISS30LDN-T1-GE3
Manufacturer: Vishay
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: PowerPAK1212-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 80 V
Id-Continuous Drain Current: 55.5 A
Rds On-drain-source on-resistance: 8.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1 V
Qg-gate charge: 50 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 57 W
Channel Mode:Enhancement
Brand Name: TrenchFET, PowerPAK
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Vishay Semiconductors
Configuration:Single
Fall Time: 6 ns
Forward Transconductance - Min: 37 S
Product Type:MOSFET
Rise time: 6 ns
Series:SIS
3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 26 ns
Typical turn-on delay time: 10 ns
Unit weight: 1 g