CGHV1J025D

Manufacturer: Cree, Inc.

Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors

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RoHS: Details

Transistor Type: HEMT

Technology: GaN

Gain: 17 dB

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 100 V

Vgs-gate-source breakdown voltage: - 10 V to 2 V

Id-Continuous Drain Current: 2 A

Output power: 25 W

Maximum Drain/Gate Voltage: -

Minimum Operating Temperature: -

Maximum operating temperature: -

Pd-Power Dissipation: -

Installation style: SMD/SMT

Package/Case: Die

Package: Gel Pack

Application: -

Height: 100um

Length: 1.92 mm

Operating frequency: 10 MHz to 18 GHz

range of working temperature: -

Product: GaN HEMT

Width: 800um

Trademarks: Wolfspeed / Cree

Gate/Source Cutoff Voltage: -

Number of channels: 4 Channel

kind: -

Development Kit: -

Fall time: -

NF—Noise Figure: -

P1dB - Compression point: -

Product Type: RF JFET Transistors

Rds On-Drain Source On Resistance: 600 mOhms

Rise Time: -

Factory Packing Quantity: 10

Subcategory: Transistors

Typical shutdown delay time: -

Vgs th - Gate Source Threshold Voltage: - 3V

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