CGHV50200F

Manufacturer: Cree, Inc.

Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors

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RoHS: Details

Transistor Type: HEMT

Technology: GaN

Gain: 11.5 dB

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 150 V

Vgs-gate-source breakdown voltage: - 10 V to 2 V

Id-Continuous Drain Current: 17 A

Output power: 180 W

Maximum Drain/Gate Voltage: -

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: -

Mounting style: Screw Mount

Package/Case: 4402015

Package: Tray

Operating Frequency: 4.4 GHz to 5 GHz

Operating temperature range: - 40 C to + 150 C

Trademarks: Wolfspeed / Cree

Forward Transconductance - Min: -

Development Kit: CGHV50200F-AMP

Product Type: RF JFET Transistors

Factory Packing Quantity: 40

Subcategory: Transistors

Vgs th-gate-source threshold voltage: - 3.4 V

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