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2022-09-24 20:39:25
CGHV60075D5
Manufacturer: Cree, Inc.
Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors
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RoHS: Details
Transistor Type: HEMT
Technology: GaN
Gain: 17 dB
Transistor Polarity: N-Channel
Vds-drain-source breakdown voltage: 150 V
Vgs-gate-source breakdown voltage: 150 V
Id-Continuous Drain Current: 10 A
Output power: 75W
Maximum Drain/Gate Voltage: -
Minimum Operating Temperature: -
Maximum operating temperature: -
Pd-Power Dissipation: 41.6 W
Installation style: SMD/SMT
Package/Case: Die
Package: Gel Pack
Application: -
Configuration: -
Height: 100um
Length: 3 mm
Operating frequency: 6 GHz
range of working temperature: -
Product: GaN HEMT
Width: 820um
Trademarks: Wolfspeed / Cree
Forward Transconductance - Min: -
Gate/Source Cutoff Voltage: -
kind: -
Development Kit: -
Fall time: -
NF—Noise Figure: -
P1dB - Compression point: -
Product Type: RF JFET Transistors
Rds On-Drain Source On Resistance: 280 mOhms
Rise Time: -
Factory Packing Quantity: 10
Subcategory: Transistors
Typical shutdown delay time: -
Vgs th - gate-source threshold voltage: - 10 V, + 2 V
Part number alias: CGHV60075D5-GP4