CGH40120F

Manufacturer: Cree, Inc.

Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors

RoHS: Details

Transistor Type: HEMT

Technology: GaN

Gain: 19 dB

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 120 V

Vgs-gate-source breakdown voltage: - 10 V to 2 V

Id-Continuous Drain Current: 12 A

Output power: 120W

Maximum Drain/Gate Voltage: -

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: -

Mounting style: Screw Mount

Package/Case: 440193

Package: Tray

Application: -

Configuration: Single

Height: 4.19 mm

Length: 20.45 mm

Operating Frequency: 1 GHz to 2.5 GHz

range of working temperature: -

Product: GaN HEMT

Width: 5.97 mm

Trademarks: Wolfspeed / Cree

Forward Transconductance - Min: -

Gate/Source Cutoff Voltage: -

kind: -

Development Kit: CGH40120F-TB

Fall time: -

NF—Noise Figure: -

P1dB - Compression point: -

Product Type: RF JFET Transistors

Rds On-Drain Source On Resistance: -

Rise Time: -

Factory Packing Quantity: 100

Subcategory: Transistors

Typical shutdown delay time: -

Vgs th-gate-source threshold voltage: - 3 V

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