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2022-09-24 20:49:33
CGHV1J070D-GP4
Manufacturer: Cree, Inc.
Product Category: RF Junction Gate Field Effect Transistor (RF JFET) Transistors
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RoHS: Details
Transistor Type: HEMT
Technology: GaN SiC
Gain: 17 dB
Transistor Polarity: N-Channel
Vds-drain-source breakdown voltage: 100 V
Vgs-gate-source breakdown voltage: - 10 V to 2 V
Id-Continuous Drain Current: 6 A
Output power: 70W
Maximum operating temperature: + 225 C
Installation style: SMD/SMT
Package/Case: Die
Package: Gel Pack
Configuration: Single
Operating frequency: 10 MHz to 18 GHz
Trademarks: Wolfspeed / Cree
Number of channels: 1 Channel
Product Type: RF JFET Transistors
Rds On-drain-source on-resistance: 200 mOhms
Factory Packing Quantity: 10
Subcategory: Transistors
Vgs th-gate-source threshold voltage: - 3 V