MwT-A989: FET in DC-4 GHz package. Company advantage inventory.

feature:

?Ideal for DC – 4.0 GHz high linearity/high dynamic range applications

?Excellent RF performance:

40dBm IP3

65dBc ACPR

25dBm P1dB

17 dB SSG at 2000MHz

0.9dB NF @ 2000MHz

?MTTF > 100 years @ ambient temperature 85°C

? RoHS compliant lead-free surface mount SOT-89 package

describe:

The MwT-A989 is a high linearity GaAs MESFET device in a low cost SOT89 package, ideal for high dynamic range LNAs

application. These applications include 2G, 2.5G and 3G wireless infrastructure standards such as GSM, TDMA, cdma, Edge,

cdma2000, WCDMA, TD-SCDMA and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructures

Applications such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). in addition,

This product can be used for point-to-point microwave communication links. The third-order interception performance of MwT-A989 is

Excellent, typically 14 dB above the 1 dB power gain compression point. At 900 MHz, NF is as low as 0.6 dB. chip production

Using MwT's proprietary high linearity device design and process and reliable metal system. All chips are passivated using MwT

Patented 'Diamond-Like Carbon' process increases durability

(MWt) was established in 1982 by technical leaders with extensive experience in the design and manufacture of gallium arsenide (GaAs) devices. With a fab spanning 35,000 square feet, the company's main assets include its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. Vertical manufacturing and product strength provide the microwave components market with unusual ease of use and opportunities.

Today, MWt is a leading US manufacturer of discrete GaAs diodes and transistors (FET, PHEMT and Gunn Diodes). Early work focused on equipment reliability led to a proprietary metallization system to keep equipment at MWt free of hydrogen contamination, a project of great interest to the high-reliability industry today.

Using proprietary epi materials and a quarter-micron recessed gate process technology, these devices produce highly linear (+48 dBmIP3 in 1WP-1dB wireless amplifiers) and low phase noise (-125 dBc@ in 17.5GHz DROs) 100 kHz offset), power output varies from 10 mW to 5 watts. Sold as chips or packages, these devices are widely used for amplifying signals from 10 MHz to 40 GHz, transmitting or receiving information in wireless infrastructure systems, industrial RF applications, and various defense and aerospace electronics fields

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