MWT-22Q4: High power, high linearity packaged FET. Company advantage inventory.

feature

?Ideal for DC-4000 MHz high power/high linearity applications

?Excellent RF performance:

33 dBm P1 dB

47dBm IP3

16 MHz SSG @ 2000 MHz

40%PAE

?MTTF > 100 years @ channel temperature 150°C

?QFN 4x4 mm surface mount package

describe

The MwT-22Q4 is a high linearity GaAs MESFET device in a low cost QFN package, ideal for high power/high linearity

application. These applications include 2G, 2.5G and 3G wireless infrastructure standards such as GSM, TDMA, cdma, Edge,

cdma2000, WCDMA, TD-SCDMA and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructures

Applications such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In addition, the product

Can be used for point-to-point microwave communication links. The third-order interception performance of MwT-22Q4 is very good,

Typically 14 dB above the 1 dB power gain compression point. The chip is produced using MwT's proprietary high linearity equipment

Reliable metal systems are designed and machined. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for improved durability.

(MWt) was established in 1982 by technical leaders with extensive experience in the design and manufacture of gallium arsenide (GaAs) devices. With a fab spanning 35,000 square feet, the company's main assets include its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. Vertical manufacturing and product strength provide the microwave components market with unusual ease of use and opportunities.

Today, MWt is a leading US manufacturer of discrete GaAs diodes and transistors (FET, PHEMT and Gunn Diodes). Early work focused on equipment reliability led to a proprietary metallization system to keep equipment at MWt free of hydrogen contamination, a project of great interest to the high-reliability industry today.

Using proprietary epi materials and a quarter-micron recessed gate process technology, these devices produce highly linear (+48 dBmIP3 in 1WP-1dB wireless amplifiers) and low phase noise (-125 dBc@ in 17.5GHz DROs) 100 kHz offset), power output varies from 10 mW to 5 watts. Sold as chips or packages, these devices are widely used for amplifying signals from 10 MHz to 40 GHz, transmitting or receiving information in wireless infrastructure systems, industrial RF applications, and various defense and aerospace electronics fields

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