MwT-1789: Company Advantage Inventory.

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Ideal for DC –4000 MHz high linearity/high dynamic range applications

Excellent RF performance:

46 dBm at IP3

70dBc ACPR

28 dBm P1 dB

14 MHz SSG @ 2000 MHz

1.3 dB NF at 2000 MHz

MTTF > 100 years @ channel temperature 150oC

RoHS Compliant Pb-Free Surface Mount SOT-89 Package

Product Description

The MwT-1789 is a high linearity GaAs MESFET device in a low cost SOT89 package, ideal for high linearity

Drivers, PA (Power Amplifier) and High Dynamic Range LNA applications. Applications include 2G, 2.5G and 3G

Wireless infrastructure standards such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TD-SCDMA and UMTS foundation

stand. This product is also suitable for high data rate wireless LAN infrastructure applications such as high QAM rate 802.11

WiFi and 802.16 WiMax base stations and APs (Access Points). In addition, the product can be used for peer-to-peer

Microwave communication link. The third-order interception performance of the MwT-1789 is excellent, typically 18 dB

Above the 1 dB power gain compression point. At 900 MHz, the noise figure is as low as 0.8 dB. chip production

Using MwT's proprietary high linearity device design. It also uses MwT's reliable metallization process. All chips are

Passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.

(MWt) was established in 1982 by technical leaders with extensive experience in the design and manufacture of gallium arsenide (GaAs) devices. With a fab spanning 35,000 square feet, the company's main assets include its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. Vertical manufacturing and product strength provide the microwave components market with unusual ease of use and opportunities.

Today, MWt is a leading US manufacturer of discrete GaAs diodes and transistors (FET, PHEMT and Gunn Diodes). Early work focused on equipment reliability led to a proprietary metallization system to keep equipment at MWt free of hydrogen contamination, a project of great interest to the high-reliability industry today.

Using proprietary epi materials and a quarter-micron recessed gate process technology, these devices produce highly linear (+48 dBmIP3 in 1WP-1dB wireless amplifiers) and low phase noise (-125 dBc@ in 17.5GHz DROs) 100 kHz offset), power output varies from 10 mW to 5 watts. Sold as chips or packages, these devices are widely used for amplifying signals from 10 MHz to 40 GHz, transmitting or receiving information in wireless infrastructure systems, industrial RF applications, and various defense and aerospace electronics fields

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MwT-GK-P

MwT-GX-C

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MwT-0513S/Z-LN300

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