MwT-0307S/Z-LN600: 3 – 7 GHz low noise balanced amplifier module. Company advantage inventory.

Features: ? Frequency range 3 to 7 GHz

? Noise figure 1.2 dB

? Small signal gain 12 dB

?P1dB 16dBm

?Input/Output RL 15 dB

describe:

MwT-0307S-LN600 and MwT-0307Z-LN600 are low noise open carrier amplifier modules that operate in

3 and 7 GHz have excellent wideband noise figure, and the input and output ports are matched to 50Ω impedance. of

The substrates of the input and output matching circuits are ceramic and mounted on a metal carrier. module

It can be easily mounted on the enclosure to which the amplifier is attached. The noise figure for the entire frequency band is 1.2 dB.

Typical small signal gain is 12 dB. The power output at the 1dB compression point is 16 dBm in the mid-band. Input and output VSWR is 1.4:1

Hybrid module

Miniature Embedded Mixing Amplifier

Low noise, high gain and high power options

Gain Block, Temperature Compensation and Regulator Options

Low VSWR for improved cascading performance

Single Voltage Supply and Low Current Design

Space-compliant GaAs devices and thin-film substrates using MwT

100% eutectic assembly technology ensures high reliability

Standard and Customer-Specific Specifications

Connector amplifier options available upon request

Provides high-privilege and space role filtering

(MWt) was established in 1982 by technical leaders with extensive experience in the design and manufacture of gallium arsenide (GaAs) devices. With a fab spanning 35,000 square feet, the company's main assets include its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. Vertical manufacturing and product strength provide the microwave components market with unusual ease of use and opportunities.

Today, MWt is a leading US manufacturer of discrete GaAs diodes and transistors (FET, PHEMT and Gunn Diodes). Early work focused on equipment reliability led to a proprietary metallization system to keep equipment at MWt free of hydrogen contamination, a project of great interest to the high-reliability industry today.

Using proprietary epi materials and a quarter-micron recessed gate process technology, these devices produce highly linear (+48 dBmIP3 in 1WP-1dB wireless amplifiers) and low phase noise (-125 dBc@ in 17.5GHz DROs) 100 kHz offset), power output varies from 10 mW to 5 watts. Sold as chips or packages, these devices are widely used for amplifying signals from 10 MHz to 40 GHz, transmitting or receiving information in wireless infrastructure systems, industrial RF applications, and various defense and aerospace electronics fields

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