MwT-GK-C: Company Advantage Inventory.

feature:

K-band (18-26.5 GHz) frequency source applications

Excellent frequency chirp performance

Pulse or continuous operation

20 years of dependable performance and reliability

Processed in MwT dedicated GaAs fab

Available in package or mold form

typical application:

Motion Detection and Monitoring

Microwave Transmitters and Receivers

military radar

Gunn Diode Oscillator

radar detector

Based on MwT pre-epitaxial profile design and process technology, MwT-GK is Gunn

Diode devices for continuous wave and pulsed K-band (18-26.5 GHz) frequency source applications. of

The device has an output power of 13 dBm and excellent chirp performance in pulsed mode of operation. of

The device is fabricated in a MwT GaAs fab using proven reliability and robust process technology. MwT-GK is available in die or package form.

MwT-GK Gunn diodes are targeted for continuous wave and pulsed K-band (18-26.5 GHz) frequency source applications. Typical applications for this device include motion detection and surveillance,

Microwave transmitters and receivers, military radars, Gunn diode oscillators and radar detectors.

(MWt) was established in 1982 by technical leaders with extensive experience in the design and manufacture of gallium arsenide (GaAs) devices. With a fab spanning 35,000 square feet, the company's main assets include its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. Vertical manufacturing and product strength provide the microwave components market with unusual ease of use and opportunities.

Today, MWt is a leading US manufacturer of discrete GaAs diodes and transistors (FET, PHEMT and Gunn Diodes). Early work focused on equipment reliability led to a proprietary metallization system to keep equipment at MWt free of hydrogen contamination, a project of great interest to the high-reliability industry today.

Using proprietary epi materials and a quarter-micron recessed gate process technology, these devices produce highly linear (+48 dBmIP3 in 1WP-1dB wireless amplifiers) and low phase noise (-125 dBc@ in 17.5GHz DROs) 100 kHz offset), power output varies from 10 mW to 5 watts. Sold as chips or packages, these devices are widely used for amplifying signals from 10 MHz to 40 GHz, transmitting or receiving information in wireless infrastructure systems, industrial RF applications, and various defense and aerospace electronics fields

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