MwT-LN240: 26 GHz ultra-low noise pHEMT device. Company advantage inventory.

Functional application

MwT-LN240

? 26 GHz ultra-low noise pHEMT device

describe

z Minimum noise figure 0.5 dB at 0.5 GHz

10 dB correlation gain at 12 GHz

z 16 dBm P1dB at 12 GHz

z 0.15 micron x 240 micron gate

zExcellent choice for ultra-low noise applications

z Suitable for commercial, military, high-rise space applications

The MwT-LN240 is an ultra-low noise, quasi-enhancement mode pHEMT with a nominal gate length of 0.15 microns,

240-micron gate width makes it ideal for applications requiring low noise figure and high correlation gain

up to 30 GHz. The device is equally effective for wideband (eg 6 to 18 GHz) and narrowband applications. per wafer

Screening can be performed to meet the high quality and reliability requirements of military and space applications.

GaAs FET/PHEMTs RF Characteristics (Typical at 25°C)

Ultra-linear, high dynamic range, low phase noise

GaAs process approved for space applications with reliability

Commercial, Industrial, Military and Space Classes

100% wafer bond pull, die shear, wafer DC burnout, and bake tests are evaluated per MIL-PRF-38534

100% Die Probe Test and Shipping Data Recording

100% vision completed before shipment (level 1, 3 or 4)

100% Idss matching to provide performance consistency

RF sample testing capabilities available upon request

Standard and custom device specifications

High REL and Spatial REL screening options available

Lead-free compatible products available

MwT-LN240

MwT-LN300

MwT-LN600