MGA-242740-02: 2.4 – 2.7 GHz 10W High Efficiency Linear Power Amplifier. Company advantage inventory.

Features: ~15 dB gain

?40dBm P-3dB

~33 dBm linear output @ 2.5% EVM (802.11 64QAM)

?25% efficiency at 33 dBm linear output power

? Exactly matched inputs and outputs for easy cascading

?+28V bias voltage

? RoHS Compliant Surface Mount Package

?MTTF> 100 years @ 85oC ambient temperature

Application: ?802.16d/e WiMax

?802.11b WLAN

? Point-to-point radio applications

describe:

MGA-242740-02 is a power amplifier with state-of-the-art linear power added efficiency between 2.4 GHz

and the 2.7 GHz band. Based on advanced durable GaN device technology, the device's power added efficiency

Up to 25% power amplifier at 2W linear burst power and 2.5% EVM at 802.16d/e

64QAM modulation scheme. The high-efficiency linear power amplifier also has excellent reliability. ideal

Applications include drivers and output power stages for WiMax and WLAN infrastructure and access points. it

Can also be used for PTP (point-to-point) radio applications in this band.

Design, manufacture and marketing of GaAs and GaN based MMICs, discrete devices and hybrid amplifier products for commercial wireless communications, defense, space and medical (MRI) applications.

We offer global MMICs, discrete semiconductor devices, GaAs, GaN power amplifiers, low noise pHEMT components, wireless amplifiers, hybrid products, preamplifiers (MRI coils) and connectivity amplifiers for medical applications.

(MWt) was established in 1982 by technical leaders with extensive experience in the design and manufacture of gallium arsenide (GaAs) devices. With a fab spanning 35,000 square feet, the company's main assets include its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. Vertical manufacturing and product strength provide the microwave components market with unusual ease of use and opportunities.

Today, MWt is a leading US manufacturer of discrete GaAs diodes and transistors (FET, PHEMT and Gunn Diodes). Early work focused on equipment reliability led to a proprietary metallization system to keep equipment at MWt free of hydrogen contamination, a project of great interest to the high-reliability industry today.

Using proprietary epi materials and a quarter-micron recessed gate process technology, these devices produce highly linear (+48 dBmIP3 in 1WP-1dB wireless amplifiers) and low phase noise (-125 dBc@ in 17.5GHz DROs) 100 kHz offset), power output varies from 10 mW to 5 watts. Sold as chips or packages, these devices are widely used for amplifying signals from 10 MHz to 40 GHz, transmitting or receiving information in wireless infrastructure systems, industrial RF applications, and various defense and aerospace electronics fields

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