CoolSiC™ MOSFET Products in Easy 1B, 2B Packages

Combining the advantages of Infineon's two major products: Easy package, a benchmark for low stray inductance; 1200 V CoolSiC™ MOSFET, which significantly reduces system and operating costs. Topologically, this family of products meets the needs of EV charging applications such as high frequency operation and large output changes in DC-DC power stages.

target application

? Electric vehicle charging

?DC/DC converter

?Industrial Welder

?High frequency switching applications

? Uninterruptible Power Supply (UPS) system

?Solar system

Features

?Easy packaged CoolSiC? MOSFET products have the lowest stray inductance

? Superior gate oxide reliability

• Nearly 80% lower switching losses compared to silicon, enabling higher friction stir switching (fsw) operation

? Intrinsic diode with low reverse recovery charge

?Maximum threshold voltage for Vth > 4V

?Contains multiple switches in a small Easy package for a very compact solution

?CoolSiC? MOSFETs complement Infineon's chip portfolio

main components

?F4-23MR12W1M1_B11

?F3L15MR12W2M1_B69

Advantage

?Operates with higher switching speeds up to 50 kV/μs

?Longer life of converter system

?High efficiency and low cooling requirements, reducing system and operating costs

?Increase power density

?More effectively overcome the turn-on interference caused by parasitic parameters

? Simplify system integration and manufacturing efforts

?Hybrid module solution optimized for single converter topology