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2022-09-23 17:22:28
IHW25N120E1
Manufacturer: Infineon
Product Category: IGBT Transistor
RoHS: Details
Technology: Si
Package/Case:TO-247-3
Installation style: Through Hole
Configuration:Single
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.5 V
Gate/Emitter Maximum Voltage: 20 V
Continuous collector current at 25 C: 50 A
Pd - Power Dissipation: 231 W
Minimum operating temperature:- 40 C
Maximum operating temperature: + 150 C
Series:IGBT RC Soft Switching
Package:Tube
Trademark: Infineon Technologies
Collector maximum continuous current Ic: 50 A
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Part number alias: IHW25N120E1 SP001391910
Unit weight: 6 g