IHW25N120E1

  • 2022-09-23 17:22:28

IHW25N120E1

IHW25N120E1 Manufacturer: Infineon

Product Category: IGBT Transistor

RoHS: Details

Technology: Si

Package/Case:TO-247-3

Installation style: Through Hole

Configuration:Single

Collector-emitter maximum voltage VCEO: 1.2 kV

Collector-emitter saturation voltage: 1.5 V

Gate/Emitter Maximum Voltage: 20 V

Continuous collector current at 25 C: 50 A

Pd - Power Dissipation: 231 W

Minimum operating temperature:- 40 C

Maximum operating temperature: + 150 C

Series:IGBT RC Soft Switching

Package:Tube

Trademark: Infineon Technologies

Collector maximum continuous current Ic: 50 A

Gate-Emitter Leakage Current: 100 nA

Product Type: IGBT Transistors

Factory Pack Quantity: 240

Subcategory: IGBTs

Part number alias: IHW25N120E1 SP001391910

Unit weight: 6 g