RA30H4452M: Mitsubishi power amplifier module. Company advantage inventory.

describe

The RA30H4452M is a 30-watt RF MOSFET amplifier

module for 12.5 volts working on 440 mesh? for mobile radio

520-MHz range.

The leakage current that the battery can be directly connected to

enhancement mode MOSFET transistors. if there is no door

Voltage (V

GG

= 0V), only a small leakage current flows

Drain and RF input signals are attenuated up to 60dB. output

Power and leakage current increase, as gate voltage increases.

around 4V (minimum), the output power gate voltage and

Basically the leakage current increases. Rated output power

Available in 4.5V (typ) and 5V (max). exist

V

GG

= 5V, typical gate current is 1mA.

This module is designed for nonlinear FM modulation, but may

Also by using drain static for linear modulation

Current vs. Gate Voltage and Controlled Output Power

with input power.

describe

The RA30H4452M is a 30-watt RF MOSFET amplifier

module for 12.5 volts working on 440 mesh? for mobile radio

520-MHz range.

The leakage current that the battery can be directly connected to

enhancement mode MOSFET transistors. if there is no door

Voltage (V

GG

= 0V), only a small leakage current flows

Drain and RF input signals are attenuated up to 60dB. output

Power and leakage current increase, as gate voltage increases.

around 4V (minimum), the output power gate voltage and

Basically the leakage current increases. Rated output power

Available in 4.5V (typ) and 5V (max). exist

V

GG

= 5V, typical gate current is 1mA.

This module is designed for nonlinear FM modulation, but may

Also by using drain static for linear modulation

Current vs. Gate Voltage and Controlled Output Power

with input power.

describe

The RA30H4452M is a 30-watt RF MOSFET amplifier

module for 12.5 volts working on 440 mesh? for mobile radio

520-MHz range.

The leakage current that the battery can be directly connected to

enhancement mode MOSFET transistors. if there is no door

Voltage (V

GG

= 0V), only a small leakage current flows

Drain and RF input signals are attenuated up to 60dB. output

Power and leakage current increase, as gate voltage increases.

around 4V (minimum), the output power gate voltage and

Basically the leakage current increases. Rated output power

Available in 4.5V (typ) and 5V (max). exist

V

GG

= 5V, typical gate current is 1mA.

This module is designed for nonlinear FM modulation, but may

Also by using drain static for linear modulation

Current vs. Gate Voltage and Controlled Output Power

with input power.

Precautions:

1. High temperature; this product may have heat while operating, please note that there is a

May receive burns after directly touching the operated product or touching the product until the cold switch is turned off.

In the near product, do not place flammable materials with the possibility of fire.

2. Generation of high-frequency power; the high-frequency power generated by this product. Please note that do

Do not leak unnecessary radio waves, and use the product without damage to personnel and property caused by

normal operation.

3. Before use; before using this product, please design the equipment carefully, considering the human risk and

Devices that block radio waves.

Precautions - Purpose of Mitsubishi Silicon RF Power Amplifier Units:

1. Specifications mentioned are not guaranteed values in this data sheet. Please confirm other details

Operation for these products is from the regular specification sheet. For a copy of the official specification

Sheets, please contact our sales office.

2. RA series products (RF power amplifier modules) are designed as consumer mobile communication terminals

Not specifically designed for use in other applications. In particular, although these products have strong

Reliable by design, they are not tested in quality assurance protocols, they are manufactured

A level sufficient to ensure reliability is generally considered necessary for critical communication components.

Examples of key communication elements include transmitting base station applications and fixed

The operation is related to long-term continuous transmission and radio applications at higher switching frequencies

Send, especially for social systems that can have high impact.

3. RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltages, so

Proper ESD precautions are required.

4.In order to maximize the reliability of the device, it is best to keep the device temperature low. This is

It is recommended to utilize an adequately sized heat sink with other cooling methods, if required (fans,

etc.) to keep the case temperature for RA series products lower than 60deg/°C under standard conditions, and

Under extreme conditions of less than 90 degrees/℃.

5. The RA series products are designed to operate with a nominal load impedance of 50 ohms. under the conditions

Operating into a severe high-load VSWR close to an open circuit or short circuit, an overload condition may occur. exist

In the worst case there is a risk of burning out the transistor and burning other parts, including the substrate

module.

6. The formal specification includes a guarantee against parasitic oscillations under the specified maximum load

mismatch. Checking for parasitic oscillations is carried out on a sample basis in our production

Wire. So it is recommended to verify that there are no parasitic oscillations, at the level of the built equipment

also.

7. In order to enable the components of these products to be fitted into equipment for specific precautions, please refer to

Supplementary item in spec sheet.

8.Warranty product is invalid if the product protective cover (cover) is removed, or any modification of the product

From its way is the original form.

9.For additional "safety first" information on your circuit design and instructions, see the last page

this data sheet.

10. Please refer to the additional precautions in the official specification sheet.