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2022-09-24 21:11:22
SIR876ADP-T1-GE3
SIR876ADP-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: PowerPAK-SO-8
Number of channels: 1 Channel
Transistor Polarity: N-Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 40 A
Rds On-Drain Source On Resistance: 9 mOhms
Vgs - Gate-Source Voltage: 20 V
Vgs th-gate-source threshold voltage: 1.5 V
Qg-gate charge: 49 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power Dissipation: 62.5 W
Configuration: Single
Channel Mode: Enhancement
Brand Names: TrenchFET, PowerPAK
Package: Cut Tape
Package: MouseReel
Package: Reel
Series: SIR
Transistor Type: 1 N-Channel
Brand: Vishay / Siliconix
Forward Transconductance - Min: 54 S
Fall Time: 8 ns
Product Type: MOSFET
Rise Time: 8 ns
Factory Packing Quantity: 3000
Subcategory: MOSFETs
Typical turn-off delay time: 28 ns
Typical turn-on delay time: 11 ns
Part number alias: SIR876ADP-GE3
Unit weight: 506.600 mg