Features

100%test settlement time 340ns typical value

At the node is 1MV, 10V step maximum 540ns

Test with fixed feedback capacitors

The minimum rotation rate is 60V/μs

gain bandwidth product 14MHz

Power bandwidth (20VP-P) 1.2 MHz

The unit gain is stable; 123]

The input bias voltage maximum 600 μV

Input bias current 25 ° C maximum 75Pa

70 ° C maximum 600Pa

Input offset current 25 ° C The maximum 40Pa

70 ° C maximum 150Pa

Application

Quick 12 -bit D/A output amplifier

High -speed buffer

Quick sampling maintenance amplifier

High-speed integralor

Voltage-frequency converter

Active filter

Dive amplifier

[

[ 123] Peak detector

Description

LT1122

JFET input computing amplifier combination high -speed precision performance. The unique polycrystalline silicon grid JFET process makes the grid series minimize resistance and grid leakage capacitance, which is convenient for broad band wide performance without reducing the matching of JFET transistors. It rotates at 80V/μs and sinks at 340ns. LT1122 is a stable internal compensation for a unified gain, but it has a bandwidth of 14MHz and the power supply current is only 7mA. Its speed makes LT1122 an ideal choice of 12 -bit data conversion and acquisition system for rapid settlement. The LT1122 bias voltage is 120 μV, and the voltage gain is 500,000 and supports 12 -bit accurate applications. The input bias current is 10Pa, and the bias current is 4PA combined with its speed. The LT1122 can be used for such as high -speed sampling kernels, peak detectors, and integralizers.

The most valuable value

Power voltage ± 20 volts

Differential input voltage ± 40 volt

Input voltage ± 20 volts

The short -circuit duration of the output is uncertain

Lead temperature (welding, 10 seconds) 300 degrees Celsius

Work temperature range

LT1122AM/BM/BM/ CM/DM -55 ° C to 125 ° C

LT1122AC/BC/CC/DC/CS/DS — 40 ° C to 85 ° C

Storage temperature range

All equipment –65 ° C to 150 ° C

Unless otherwise explained, electrical C characteristics vs ± 15V, TA 25 ° C, VCM, VCM 0V. (Note 1)

Unless otherwise explained, electrical C characteristics vs ± 15V, TA 25 ° C, VCM 0V.

indicates the standard temperature range suitable for the entire operation.

Note 1: The measurement value of the LT1122 in the automatic tester is less than 1 and the second time is powered on. Depending on the packaging, under the conditions of power heat dissipation, heat dissipation, and air flow, the temperature of the full preheating chip can be 10 ° C to 50 ° C higher than the ambient temperature.

Note 2: Use the settlement method to perform 100%testing time for the settlement time of A and C -Class. This test does not include the sample test in quality assurance.

Note 3: The input voltage range function ensures the maximum limit of the voltage within the input voltage range by test bias to 4MV (A, B grade) to 5.7mv (C, D level).

Note 4: The maximum 7 millivoltage by measuring is measured at ± 5V power conditions.

Note 5: LT1122 is not tested and does not guarantee sampling -40 ° C and 85 ° C without quality. These specifications are guaranteed by the design guarantee, the correlation and/or inferred test of -55 ° C, 0 ° C, 25 ° C, 70 ° C and/or 125 ° C.

Electrical features

vs ± 15V, VCM 0V, –40 ° C ≤ TA ≤ 85 ° C, unless there is another instructions. (Note 5)

Typical performance features

Typical application ]

Settlement time measurement

Stable time test circuit device data table requirements:

1. flat top pulse generator. Unfortunately, the flat -top pulse generator is not commercial.

2. Variable feedback capacitors test around the device. This capacitor changes within a four -to -one range. Probably because each computing amplifier is used to measure the time, the capacitor is fine -tuned to optimize the time to settle the special device.

3. Settled by a small electromoter load optimization. The test of the LT1122's sedimentation time was performed 100%in the test. No flat top pulse generator is required. The integrated circuit that can be bought on the market can easily build a test circuit. Of course, standard high -frequency should follow plate construction technology. All LT1122 uses a constant feedback capacitor for measurement. No need to fine -tune. Speed improvement/over -supplementThe pins of the end -end LT1122 can be used to change the working current of the input -level device. The pins 8 shorts to the positive power supply (pin 7) increased the conversion rate and bandwidth by about 25%, but the cost is about 18 degrees at the price reduction. The unit gain effective load processing capacity has been reduced from the usual 500PF to 100 Hualhi. Instead, connect 15K resistance from pins 8 to ground to ground and pull 1MA out of the pin 8 (V+ 15V). This reduces the conversion rate and bandwidth by 25%. Phasewear capacitance load processing capacity has been improved; the latter is typically increased to 800PF.

High -speed operation

Like most high -speed amplifiers, you should be careful to bring power down coupling, lead and component resettlement. The power connection of the LT1122 must be 20 Mix in the bandwidth. When driving an important resistance or capacitor load, this is particularly important because all currents pass the load from the power supply. Multi -high recommendation to provide a power cord in any key application of high -quality bypass capacitors for each capacitor. 0.1 μF As shown in the figure, placing ceramics and 1μF electrolytic capacitors should be as close to the amplifier as much as possible (the length of the short -wire power supply (public) will ensure sufficient high -frequency bypass, in most applications.

[ 123]

When the feedback around the amplifier is the resistance (RF), A will use radio frequency, source resistance and capacitance (RS, CS) and amplifiers to input capacitors (CIN≈4PF). When RF is within the range of thousand ohm, this magnetic pole can produce excessive phase shift or even oscillation. Small capacitors (CF) and RF can eliminate this problem. Remove.

Typical application

9PPM distortion oscillator oscillator