IRFB3607PBF

  • 2022-09-23 17:22:28

IRFB3607PBF

brand

Infineon

package

TO-220

manufacturer

Infineon Technologies

series

HEXFET?

FET type

N channel

Drain-Source Voltage (Vdss)

75V

Current at 25°C - Continuous Drain (Id)

80A (Tc)

Vgs(th) (maximum) at different Ids

4V @ 100μA

Vgs (max)

±20V

Power dissipation (max)

140W (Tc)

Operating temperature

-55°C ~ 175°C (TJ)

installation type

through hole

Package/Enclosure

TO-220-3

available for sale

National

type

Discrete Semiconductor Products Transistor - FET, MOSFET -

model

IRFB3607PBF

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