Provides optimized technology for motor drive systems for electric motors such as IGBT7, perfectly suited to the needs of drive applications such as overload and switching speed control. As awareness of the cost of energy continues to increase, the way electric motors are driven by electricity needs to be more efficient, both environmentally and financially. Through speed and torque control of the motor drive system of the electric motor, process optimization can be achieved, resulting in high energy savings.

The 1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on the latest micro-patterned trench technology to drastically reduce losses and provide a high level of controllability. The chip is optimized for industrial drive applications, which means lower static losses, higher power density and softer switching. Additionally, power density can be significantly increased by increasing the maximum operating temperature allowed in the power module to +175°C.

Infineon Technologies has introduced CoolSiC™ MOSFET technology that enables different product designs. Silicon carbide (SiC) MOSFETs offer a range of advantages in performance, reliability and ease of use compared to traditional silicon-based switches such as IGBTs and MOSFETs. SiC brings new flexibility to system designers, enabling designers to achieve unprecedented levels of efficiency and reliability.

The CIPOS® Maxi 1200 V, 10 A three-phase IGBT-based smart power module in a DIP 36x23D package with open emitter provides a fully functional compact inverter solution with excellent thermal conductivity. Some applications include motor drives such as industrial drives, fans and pumps, HVAC, and active filters.

EiceDRIVER? Galvanically Isolated Gate Drivers use Magnetically Coupled Coreless Transformer (CT) technology to provide signal transmission across galvanic isolation. It offers functional, basic and reinforced isolation UL 1577 and VDE 0884 certified products. Isolation allows very large voltage swings (eg ±1200 V).

Infineon's Silicon On Insulator (SOI) technology is a high-voltage, level-shifting technology with unique, measurable advantages, including an integrated bootstrap diode (BSD), and robust protection against negative transients voltage spikes. Each transistor is isolated by buried silicon dioxide, eliminating parasitic bipolar transistors that cause latch-up. This technology also reduces level-shifting power losses to minimize device switching power consumption. Advanced processes bring technology-enhancing benefits to monolithic high-voltage and low-voltage circuit structures.

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