LND150N8-G

  • 2022-09-23 17:22:28

LND150N8-G

Manufacturer: Microchip

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/ Box: SOT-89-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 500 V

Id-Continuous Drain Current: 30 mA

Rds On-Drain Source On Resistance: 1 kOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 800 mV

Qg-gate charge:-

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd - Power Dissipation: 1.6 W

Channel Mode:Depletion

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: Microchip Technology / Atmel

Configuration:Single

Fall time: 1.3 us

Forward Transconductance - Min: 1 mS

Height: 1.6 mm

Length: 4.6 mm

Product: MOSFET Small Signal

Product Type:MOSFET

Rise time: 0.45 us

2000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Type: FET

Typical turn-off delay time: 0.1 us

Typical turn-on delay time: 0.09 us

Width: 2.6 mm

Unit weight: 52.800 mg