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2022-09-23 17:22:28
IPP60R190C6XKSA1 new original genuine spot
IPP60R190C6XKSA1
category
Discrete Semiconductor Products
Transistor - FET, MOSFET - Single
manufacturer
Infineon Technologies
series
CoolMOS
Package
pipe fittings
product status
Not available for new designs
FET type
N channel
technology
MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)
600V
Current at 25°C - Continuous Drain (Id)
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
On-resistance (max) at different Id, Vgs
190 milliohms @ 9.5A, 10V
Vgs(th) (maximum) at different Ids
3.5V @ 630μA
Gate charge (Qg) at different Vgs (max)
63nC @ 10V
Vgs (max)
±20V
Input capacitance (Ciss) at different Vds (max)
1400 pF @ 100 V
FET function
-
Power dissipation (max)
151W (Tc)
Operating temperature
-55°C ~ 150°C (TJ)
installation type
through hole
Supplier Device Packaging
PG-TO220-3
Package/Enclosure
TO-220-3
Basic product number
IPP60R190
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